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VUO 120 VUO 155
Three Phase Rectifier Bridge
IdAVM = 121/157 A VRRM = 1200-1600 V
VRRM Type V V
VRRM Type
A6 E6 K6
Therm.
M1/O1 W5
option
1200 VUO 120-12 NO1 1600 VUO 120-16 NO1 1200 VUO 155-12 NO1 1600 VUO 155-16 NO1
W6 M10/O10
Symbol VRRM IdAVM IFSM I2t Ptot TVJ TVJM Tstg VISOL Md dS dA a Weight Symbol
Test Conditions
Maximum Ratings
VUO 120 1200/1600 VUO155 1200/1600 V
Features
TC = 75C, sinusoidal 120 TVJ = 45C, TVJ = 150C, TVJ = 45C, TVJ = 150C, TC = 25C per diode t = 10 ms, VR = 0 V t = 10 ms, VR = 0 V t = 10 ms, VR = 0 V t = 10 ms, VR = 0V
121 650 580 2110 1680 150 -40...+150 150 -40...+125
157 850 760 3610 2880 190
A
A A A A W C C C V~ V~

Soldering connections for PCB mounting Isolation voltage 3600 V~ Convenient package outline UL registered E 72873 Case and potting UL94 V-0
Applications
Input Rectifier for Drive Inverters
50/60 Hz IISOL 1 mA Mounting torque
t = 1 min t=1s (M5) (10-32 unf)
3000 3600 2-2.5 18-22 12.7 9.4 50 80
Advantages

Nm lb.in. mm mm m/s2 g
Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability
Creep distance on surface Strike distance in air Maximum allowable acceleration typ. Test Conditions
Dimensions in mm (1 mm = 0.0394")
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 0.3 5
VUO 120 VUO 155 VUO 120 VUO 155 VUO 120 VUO 155 VUO 120 VUO 155 VUO 120 VUO 155
IR VF VF0 rT RthJC RthJH R25 (option)
VR = VRRM, VR = VRRM, IF = 150 A,
TVJ = 25C TVJ = 150C TVJ = 25C
mA mA V V V V m m
1.59 1.49 0.80 0.75 6.1 4.6
For power-loss calculations only TVJ = 150C per diode
1.0 K/W 0.8 K/W 1.3 K/W 1.1 K/W 2.2 k
211
Siemens S 891/2,2/+9
IXYS reserves the right to change limits, test conditions and dimensions
(c) 2002 IXYS All rights reserved
1-3
VUO 120
150 A 120 IF 90 TVJ = 150C TVJ = 25C
700 A 600 IFSM 500 400 300
50 Hz, 80% VRRM
104 As I2t TVJ = 45C
2
VR = 0 V
60
TVJ = 45C 200
30 100 0 0.0 0 0.001
TVJ = 150C TVJ = 150C 103 0.01 0.1 t s 1 1 2 3 4 5 6 7 ms 10 89 t
0.5
1.0 VF
1.5 V 2.0
Fig. 1 Forward current versus voltage drop per diode
150
Fig. 2 Surge overload current
Fig. 3 I2t versus time per diode
140 A 120 100 Id(AV)M 80 60
RthKA: W Ptot 100 0.7 1 1.4 2 3 5 KW KW KW KW KW KW
50 40 20 0 0 20 40 60 80 100 120 A 0 Id(AV)M 20 40 60 80 100 120 140 C
Tamb
0 0 20 40 60 80 100 120 140 C TC
Fig. 4
Power dissipation versus direct output current and ambient temperature, sine 120
1.2
Fig. 5 Max. forward current versus case temperature
K/W 1.0
0.8
0.6
Constants for ZthJC calculation: i 1 2 3 4
VUO 120
0.4
Rthi (K/W) 0.003521 0.1479 0.5599 0.2887
ti (s) 0.01 0.05 0.14 0.5
0.2
0.0 0.01
0.1
1 t
s
10
Fig. 6 Transient thermal impedance junction to case
(c) 2002 IXYS All rights reserved
2-3
VUO 155
150 A 120 IF 90 TVJ = 150C TVJ = 25C 60
700 50 Hz, 80% VRRM A 600 IFSM 500 400 300 TVJ = 45C
104 A2s I2t
VR = 0 V
TVJ = 45C
TVJ = 150C 200
30 100 0 0.0 0 0.001
TVJ = 150C
103 0.01 0.1 t s 1 1 2 3 4 5 6 7 ms10 89 t
0.5
1.0 VF
1.5 V 2.0
Fig. 1 Forward current versus voltage drop per diode
Fig. 2 Surge overload current
Fig. 3 I2t versus time per diode
180 A 160 140 Id(AV)M 120 100 80 60
W 150
RthKA: 0.7 1 1.4 2 3 5 KW KW KW KW KW KW
Ptot 100
50 40 20 0 0 20 40 60 80 100 120 140 A 0 Id(AV)M 20 40 60 80 100 120 140 C
Tamb
0 0 20 40 60 80 100 120 140 C TC
Fig. 4
Power dissipation versus direct output current and ambient temperature, sine 120
1.0
Fig. 5 Max. forward current versus case temperature
K/W 0.8
0.6
Constants for ZthJC calculation:
0.4
i 1 2 3 4
VUO 155
Rthi (K/W) 0.002817 0.1183 0.4479 0.231
ti (s) 0.01 0.05 0.14 0.5
0.2
0.0 0.01
0.1
1 t
s
10
Fig. 6 Transient thermal impedance junction to case
(c) 2002 IXYS All rights reserved
3-3

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